AO4614,AO4614場(chǎng)效應(yīng)管參數(shù),AO4614參數(shù)規(guī)格書,AO4614代換
AO4614場(chǎng)效應(yīng)管,N+PMOS管AO4614參數(shù)資料,AO4614引腳圖,AO4614中文資料規(guī)格書PDF
AO4614場(chǎng)效應(yīng)管,N+PMOS管AO4614參數(shù)資料,AO4614引腳圖,AO4614中文資料規(guī)格書PDF
AO4614/SOP-8/SOIC-8封裝參數(shù):點(diǎn)擊查看
AO4614場(chǎng)效應(yīng)管參數(shù)具體如下:
極性:NMOS+PMOS
Drain-Source Voltage 漏源電壓Vds:40V
Continuous Drain Current 漏極電流Id Tc=25℃:7.2A
Continuous Drain Current 漏極電流Id Tc=25℃:7.2A
Gate-Source Voltage 柵源電壓Vgs:±20V
Power Dissipation 功率損耗Pd Ta=25℃:1.67W
Power Dissipation 功率損耗Pd Ta=25℃:1.67W
Static Drain-Source On-Resistance 導(dǎo)通電阻ID=5A,VGS=10V: Typ 20mΩ Max 26mΩ
Static Drain-Source On-Resistance 導(dǎo)通電阻ID=4A,VGS=4.5V:Typ 28mΩ Max 33mΩ
Drain-Source Voltage 漏源電壓Vds:-40VContinuous Drain Current 漏極電流Id Tc=25℃:-6.5A
Gate-Source Voltage 柵源電壓Vgs:±20V
Gate-Source Voltage 柵源電壓Vgs:±20V
Power Dissipation 功率損耗Pd Ta=25℃:1.67W
Static Drain-Source On-Resistance 導(dǎo)通電阻ID=-6A,VGS=-10V: Typ 45mΩ Max 54mΩ
Static Drain-Source On-Resistance 導(dǎo)通電阻ID=-4A,VGS=-4.5V:Typ 80mΩ Max 85mΩ
Junction and Storage Temperature Range 溫度范圍:-55~+150℃
AO4614場(chǎng)效應(yīng)管SOP-8/SOIC-8封裝尺寸:
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